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SMBTA06U
NPN Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56U (PNP) Two ( galvanic) internal isolated Transistors with good matching in one package
5 6
4

3 2 1
VPW09197
C1 6
B2 5
E2 4
TR2 TR1
1 E1
2 B1
3 C2
EHA07178
Type SMBTA06U
Maximum Ratings Parameter
Marking s1G
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 80 80 4 500 1 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 115 C Junction temperature Storage temperature
mA A mA mW C
Thermal Resistance Junction - soldering point1) RthJS
105
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBTA06U
Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 C ICBO ICEO hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
80 80 4 -
-
100 20 100
V
nA A nA -
Collector cutoff current
VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V
100 100
VCEsat VBE(ON)
-
0.25 1.2 V
-
AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 pF fT 100 MHz
1) Pulse test: t 300s, D = 2%
2
Nov-30-2001
SMBTA06U
Total power dissipation Ptot = f (TS )
Collector cutoff current ICBO = f (TA)
VCB = 80V
400
mW
10 4 nA
EHP00820
CBO
300
10 3 5 10 2 5 10 1 5 10 0 5 10 -1 0 50
max
Ptot
250
200
typ
150
100
50
0 0
20
40
60
80
100
120 C
150
100 TA
C 150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
10 2
RthJS
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0
10 -1 -6 10
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10
-5
Ptotmax / PtotDC
-4 -3 -2 0
10 1
10
10
10
s
10
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
3
Nov-30-2001
SMBTA06U
Collector-emitter saturation voltage
IC = f (VCEsat ), hFE = 10
Base-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
10 3 mA
EHP00818
10
3
EHP00819
C mA
100 C 25 C -50 C
C
10 2 5
100 C 25 C -50 C
10 2 5
10 1 5
10 1 5
10 0 5
10 0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V V CEsat
0.8
10 -1
0
0.5
1.0
V
1.5
V BEsat
DC current gain hFE = f (IC )
VCE = 1V
EHP00821
Collector current IC = f (VBE)
VCE = 1V
EHP00815
10 3 h FE 100 C 10 2 25 C
10 3 mA
C
10 2 5
100 C 25 C -50 C
-50 C
10 1 5
10 1
10 0 5
10 0 -1 10
10
0
10
1
10
2
mA 10
3
10 -1 0 0.5 1.0 V BE V 1.5
C
4
Nov-30-2001
SMBTA06U
Transition frequency fT = f (IC)
VCE = 5V
10 3 MHz fT 5
EHP00817
10 2
5
10 1 10 0
5 10 1
5 10 2
mA
10 3
C
5
Nov-30-2001

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